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| SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for use as a load switch in battery powered applications. KMA2D3P20S P-Ch Trench MOSFET E B FEATURES VDSS=-20V, ID=-2.3A. Drain-Source ON Resistance. A 2 3 G H 1 D : RDS(ON)=130m (Max.) @ VGS=-4.5V. : RDS(ON)=190m (Max.) @ VGS=-2.5V. DIM A B C D E G H J K M N MILLIMETERS _ 2.93 + 0.1 _ 1.63 + 0.1 1.25 MAX 0.40+0.1/-0.05 _ 2.80 + 0.15 _ 1.9 + 0.1 _ 0.95 + 0.1 0.15+0.1/-0.05 0.00 ~ 0.15 _ 0.45 + 0.08 _ 1.10 + 0.1 C N MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL RATING VDSS VGSS ID * IDP* IS * -20 10 -2.3 A -8 -1.25 1.25 150 -55 150 100 /W A W UNIT V V K M SOT-23W Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 PD * Tj Tstg RthJA * Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board SH1 PIN CONNECTION (TOP VIEW) D 3 3 2 1 2 1 G S 2007. 5. 30 Revision No : 2 J 1/5 KMA2D3P20S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance ON State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage Dynamic (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Trancefer Capacitance Note 1) Pulse test : Pulse width 300 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss , Duty Cycle 2%. VDS=-20V, VGS=0V f = 1.0MHz 45 VDS=-10V, ID=-1A VGS=-4.5V, RG=6 (Fig.2) VDS=-10V, ID=-2.3A VGS=-4.5V (Fig.1) 3.2 0.7 0.8 9.8 10.8 79.1 41.3 290 60 ns pF nC BVDSS IDSS IGSS Vth RDS(ON) VGS=-2.5V, ID=-1.0A ID(ON) gfs VSD VGS=-4.5V, VDS=-5V VDS=-5V, ID=-2.3A VGS=0V, IS=-1.25A (Note 1) (Note 1) (Note 1) (Note 1) -5 175 6 -0.85 190 -1.2 A S V ID=-250 A, VGS=0V, VGS=0V, VDS=-16V VGS= 10V, VDS=0V (Note 1) (Note 1) -20 -0.5 -0.8 115 -1 100 -1.5 130 m V A nA V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL VDS=VGS, ID=-250 A VGS=-4.5V, ID=-2.3A Note 2) Guaranteed by design. Not subject to production testing. 2007. 5. 30 Revision No : 2 2/5 KMA2D3P20S Fig1. ID - VDS -20 -10V -4.5V -15 VD = VG Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) -16 -12 Tj=25 C -6V -4V -12 -9 Tj= -55 C Tj=125 C -3V -8 VGS = -2V -6 -4 -3 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 -4.8 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. Vth - Tj Normalized Threshold Voltage Vth 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -75 -50 -25 Fig4. IS - VSD Reverse Drain Current IS (A) ID= -250A VDS = VGS -20 -10 0 25 50 75 100 125 -1 -0.4 Tj=25 C -0.8 -1.2 -1.6 -2.0 -2.4 Junction Temperature Tj ( C) Source - Drain Voltage VSD (V) Fig5. RDS(ON) - Tj 2.2 VGS = -4.5V IDS =-2.3A Fig6. C - VDS 500 400 Frequency = 1MHz Normalized On Resistance 1.8 1.4 1.0 0.6 0.2 0 Capacitance (pF) Ciss 300 200 Coss 100 Crss 0 -75 -50 -25 0 25 50 75 100 125 0 -5 -10 -15 -20 -25 -30 Junction Temperture Tj ( C ) Drain - Source Voltage VDS (V) 2007. 5. 30 Revision No : 2 3/5 KMA2D3P20S Fig7. Qg - VGS -5 Gate - Source Voltage VGS (V) -4 VDS = -4.5V ID = -2.3A -3 -2 -1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Gate - Charge Qg (nC) Fig8. Safe Operation Area operation in this area is limited by RDS(ON) -101 Drain Current ID (A) 100us 1ms -100 100ms 10ms 1s DC -10-1 -10-2 -10-1 VGS= -4.5V SINGLE PULSE Ta= 25 C -100 -101 -102 Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve 101 Normalized Transient Thermal Resistance 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 Single Pluse PDM t1 t2 10-2 10-5 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 102 103 10-4 Square Wave Pulse Duration (sec) 2007. 5. 30 Revision No : 2 4/5 KMA2D3P20S Fig10. Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS 1.0 mA ID VDS VGS Q Qgs Qgd Qg Fig11. Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 6 VGS 10% VDS -4.5 V VGS VDS 90% 2007. 5. 30 Revision No : 2 5/5 |
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